GED晶体振荡器,SMD100.3C(E/D)-36.000MHz,7050mm,CMOS,SMD100系列,欧美有源晶振,美国GED晶振,36MHZ有源晶振,7050mm微型晶振,时钟晶体振荡器,CMOS输出晶振,OSC振荡器,SMD100系列振荡器,SMD振荡器,尺寸7.0×5.0mm,频率36MHZ,电压5V,输出CMOS,低电压晶振,低功耗晶振,高性能晶振,以太网晶振,无线局域网晶振,多媒体设备晶振,智能家居晶振,视听设备晶振.
GED晶体振荡器,SMD100.3C(E/D)-36.000MHz,7050mm,CMOS,SMD100系列特点:
HCMOS/TTL输出
5.0V电源电压
陶瓷SMD有源晶振封装
可用于磁带和卷轴
GED晶体振荡器,SMD100.3C(E/D)-36.000MHz,7050mm,CMOS,SMD100系列 参数表
ELECTRICAL SPECIFICATIONS | |||||
Frequency Range | 36.000MHz | ||||
Frequency Stability | ±20ppm±25ppm±50ppm±100ppm | ||||
Operating Temperature Range | 0°Cto+70°Cor–40°Cto 85°C | ||||
Storage Temperature Range | -55 ~ +125°C | ||||
Input Voltage | +5.0VDC±10% | ||||
Input Current |
1.000MHz to 32.000MHz 33.000MHz to 49.000MHz 50.000MHz to 69.000MHz 70.000MHz to 133.000MHz |
20mA Max 45mA Max 50mA Max 100mA Max |
|||
Symmetry | 50±10% Standard,50±5% Available | ||||
Rise / Fall Time | TTL | 5nSeconds Typical, 10nSeconds Max | |||
CMOS | 5nSeconds Typical, 10nSeconds Max | ||||
Output Level | TTL | VOL: 0.4V MaxVOH: +2.4V Min | |||
CMOS | VOL: 0.5V MaxVOH: VDD– 0.5V Min | ||||
Output Load | CMOS, compatible, 1~10TTL Gates | ||||
Pin 1 Option | No connectionEnable/Disable (Tristate) |
GED晶体振荡器,SMD100.3C(E/D)-36.000MHz,7050mm,CMOS,SMD100系列 尺寸图