6G网络电信晶振,Silicon差分振荡器Si535,535EB156M250DG，尺寸7.00mmx5.00mm，频率156.25MHZ，电压2.5V，输出逻辑LVPECL，LVPECL输出晶振，LVPECL差分晶振，XO时钟晶体振荡器，石英晶体振荡器，7050mm有源晶振，有源晶体振荡器，低抖动差分晶振，低功耗差分晶振，低相位差分晶振，低相位差分晶振，路由器专用晶振，交换机差分晶振，网络电信差分晶振，有源贴片晶振具有低抖动低相位的特点，产品比较适合用于10/100G数据中心，10G以太网交换机/路由器，光纤通道/SAS/存储，企业服务器，网络，电信等领域。
Si535/536 XO采用Skyworks Solutions的先进DSPLL®电路以提供高速差分频率的超低抖动时钟。与传统XO不同，在传统XO时钟晶体振荡器中，每个输出都需要不同的晶体频率，Si535/536使用一个固定晶体来提供宽范围的输出频率。这种基于IC的方法允许晶体谐振器提供卓越的频率稳定性和可靠性。此外，DSPLL时钟合成提供了卓越的电源噪声抑制，简化了任务在噪声环境中生成低抖动时钟通信系统。基于Si535/536 IC的XO是工厂编程的在装运时，从而消除了与定制振荡器。6G网络电信晶振,Silicon差分振荡器Si535,535EB156M250DG.
6G网络电信晶振,Silicon差分振荡器Si535,535EB156M250DG 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL LVDS |
— — |
111 90 |
121 98 |
mA | ||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | °C | |||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
| Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
| Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
| Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
| Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
| Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
| Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
| Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
| Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
| Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
| Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
|
LVPECL/LVDS Phase Jitter* (RMS) |
φJ | 10 kHz to 1 MHz (data center) | — | 0.19 | 0.35 | ps | ||||||||||||||||
| 12 kHz to 20 MHz brickwall | — | 0.25 | 0.40 | ps | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| LVPECL/LVDS Period Jitter* | JPER | RMS | — | 2 | — | ps | ||||||||||||||||
| Peak-to-Peak | — | 14 | — | ps | ||||||||||||||||||
6G网络电信晶振,Silicon差分振荡器Si535,535EB156M250DG 尺寸图
有源晶振产品特性：
可从中选择频率
100兆赫至312.5兆赫
具有卓越性能的第三代DSPLL®
抖动性能和高功率
电源噪声抑制
频率稳定性比
SAW振荡器
提供LVPECL和LVDS输出
3.3和2.5 V电源选项
行业标准5 x 7毫米
包装和引脚
无铅/符合RoHS
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| 511BBA212M500AAG | Silicon振荡器 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 510ABA200M000AAG | Silicon振荡器 | Si510 | 200MHz | 3.3V | ±25ppm |
| 511ABA200M000AAG | Silicon振荡器 | Si511 | 200MHz | 3.3V | ±25ppm |
| 530EC125M000DG | Silicon振荡器 | Si530 | 125MHz | 2.5V | ±7ppm |
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| 531EC200M000DG | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531AC000110DG | Silicon振荡器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DG | Silicon振荡器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 535EB156M250DG | Silicon振荡器 | Si535 | 156.25MHz | 2.5V | ±20ppm |
| 510CBA25M0000BAG | Silicon振荡器 | Si510 | 25MHz | 3.3V | ±25ppm |
| 511SBA156M250BAG | Silicon振荡器 | Si511 | 156.25MHz | 1.8V | ±50ppm |
| 501JAA24M0000DAF | Silicon振荡器 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501BAA16M0000DAF | Silicon振荡器 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000CAF | Silicon振荡器 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000CAF | Silicon振荡器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000BAF | Silicon振荡器 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA40M0000CAF | Silicon振荡器 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501AAA24M0000BAF | Silicon振荡器 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000CAF | Silicon振荡器 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000BAF | Silicon振荡器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000BAF | Silicon振荡器 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA25M0000BAF | Silicon振荡器 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BAA50M0000BAF | Silicon振荡器 | Si501 | 50MHz | 3.3V | ±50ppm |
| 501AAA50M0000CAF | Silicon振荡器 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000DAG | Silicon振荡器 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000DAG | Silicon振荡器 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501HCA27M0000DAF | Silicon振荡器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
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| 501HCA12M0000DAF | Silicon振荡器 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA24M0000DAF | Silicon振荡器 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501AAA24M0000BAG | Silicon振荡器 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BCA16M0000BAF | Silicon振荡器 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501JCA24M0000CAF | Silicon振荡器 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501HCA26M0000BAF | Silicon振荡器 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA25M0000BAG | Silicon振荡器 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BCA16M0000CAF | Silicon振荡器 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501EAA48M0000CAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BAA16M0000BAG | Silicon振荡器 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501BAA16M0000CAG | Silicon振荡器 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000BAG | Silicon振荡器 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000BAG | Silicon振荡器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501ACA10M0000CAF | Silicon振荡器 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA40M0000BAG | Silicon振荡器 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501ACA10M0000BAF | Silicon振荡器 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA10M0000BAF | Silicon振荡器 | Si501 | 10MHz | 3.3V | ±20ppm |
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