TG-5006CE爱普生晶振X1G004201001700苹果手机iPhone14的A16仿生芯片与卫星连接模块
TG-5006CE爱普生晶振X1G004201001700苹果手机iPhone14的A16仿生芯片与卫星连接模块
看到新的True Depth相机模块实际上要小得多,这使苹果能够打造出灵动岛.至于后置相机,iPhone14ProMax和上代一样有三个后置镜头,不过采用了新的4800万像素广角镜头,传感器要大得多,爱普生晶振从内部也可以清楚地看到这一点.其它一些值得注意的部件是卫星连接模块,此外没有SIM卡读卡器该机为美版机型或许我们可以在iFixit和Techinsights等更进一步的拆解分析中看到.
TG-5006CE爱普生晶振X1G004201001700,苹果手机iPhone14卫星连接模块晶振
爱普生有源晶振编码
型号
频率
长X宽X高
输出波
电源电压
工作温度
最大值
输出电平; 出模式; 削顶正弦波; 削峰正弦波;
X1G004131004400
TG-5006CJ
24.576000 MHz
2.00 x 1.60 x 0.73 mm
VC-TCXO~TCXO
3.135 to 3.465 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004131004900
TG-5006CJ
26.000000 MHz
2.00 x 1.60 x 0.73 mm
VC-TCXO~TCXO
1.700 to 1.900 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201000600
TG-5006CE
16.367667 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
1.700 to 1.900 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201000800
TG-5006CE
16.369000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201000900
TG-5006CE
19.200000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201001000
TG-5006CE
26.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201001300
TG-5006CE
16.367667 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201001700
TG-5006CE
26.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201002000
TG-5006CE
26.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.660 to 2.940 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201002300
TG-5006CE
26.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
1.700 to 3.465 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201002500
TG-5006CE
32.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201002600
TG-5006CE
26.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.660 to 2.940 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201003200
TG-5006CE
20.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
3.135 to 3.465 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201003300
TG-5006CE
25.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004201006200
TG-5006CE
32.000000 MHz
3.20 x 2.50 x 0.90 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000100
TG-5006CG
26.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.660 to 2.940 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000200
TG-5006CG
26.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000300
TG-5006CG
26.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000400
TG-5006CG
16.368000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000500
TG-5006CG
26.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
1.700 to 1.900 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211000600
TG-5006CG
16.367667 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-1.0 ppm
Clipped sine wave
X1G004211000800
TG-5006CG
16.369000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211001100
TG-5006CG
38.400000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211001500
TG-5006CG
16.369000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211001600
TG-5006CG
19.200000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211002700
TG-5006CG
30.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211003100
TG-5006CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.850 to 3.150 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211003300
TG-5006CG
49.999800 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
1.700 to 3.465 V
-30 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211003400
TG-5006CG
26.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
2.520 to 3.080 V
-40 to +85 °C
+/-2.0 ppm
Clipped sine wave
X1G004211003700
TG-5006CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
VC-TCXO~TCXO
1.700 to 3.465 V
-30 to +85 °C
+/-1.5 ppm
Clipped sine wave
今年Pro机型中很大不同的一点是新的True Depth摄像头,由FaceID传感器和前置摄像头组成.这次苹果将接近传感器放置在显示屏下方,这样能给原深感摄像系统腾出空间,日本进口晶振让所有组件都能安装在一个比iPhone13Pro刘海小30%的区域.电池容量、前置摄像模组变小,后置摄像模组变大A16仿生芯片4纳米工艺卫星连接模块之前的介绍iPhone14ProMax的电池容量为4323毫安时,比iPhone13Pro的4352毫安时电池略小.当然苹果公司声称由于A16仿生芯片的优化新机续航时间更长,这要归功于该芯片使用4纳米工艺制造.
TG-5006CE爱普生晶振X1G004201001700,苹果手机iPhone14卫星连接模块晶振
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